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The component density of integrated circuit memory products can be improved by the use of plasma etching when the following process modification is made to the process described in U.S. Patent 3,841,926.
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Use of Oxidized Silicon Nitride as an Etch Stop for Plasma Etching
The component density of integrated circuit memory products can be
improved by the use of plasma etching when the following process modification
is made to the process described in U.S. Patent 3,841,926.
After deposition of the silicon nitride, but before depositing the polysilicon
field shield layer, about 25 angstroms of silicon oxynitride is provided on the
silicon nitride layer by any convenient dry or wet oxidation process.
This modification enables the use of plasma etching to be used to define the
polysilicon layer. The etching will be self-stopping due to the difference in
plasma etch rate between polysilicon and silicon oxynitride.