Browse Prior Art Database

Use of Oxidized Silicon Nitride as an Etch Stop for Plasma Etching Disclosure Number: IPCOM000055765D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue


Related People

Humphrey [+details]


The component density of integrated circuit memory products can be improved by the use of plasma etching when the following process modification is made to the process described in U.S. Patent 3,841,926.