Browse Prior Art Database

Use of Oxidized Silicon Nitride as an Etch Stop for Plasma Etching

IP.com Disclosure Number: IPCOM000055765D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Humphrey [+details]

Abstract

The component density of integrated circuit memory products can be improved by the use of plasma etching when the following process modification is made to the process described in U.S. Patent 3,841,926.