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Low Temperature Plasma Nitride Field Shield for Integrated Circuits

IP.com Disclosure Number: IPCOM000055766D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Geffken, RM Kroll, CT Mohler, RL [+details]

Abstract

It has been found that plasma-enhanced chemical vapor deposition (CVD) of silicon nitride films deposited under certain conditions on to a thermally grown gate oxide on a p-substrate causes the film to exhibit a very positive flatband voltage. For example, a 7000 angstroms plasma silicon nitride film deposited on a 400 angstroms gate oxide has resulted in flatband voltage values from +15 to +40 volts. Thermal oxides have a negative flatband voltage as do conventional CVD nitride/oxide composite structures.