Browse Prior Art Database

Large Storage Capacitor for a One-Device Memory Cell

IP.com Disclosure Number: IPCOM000055772D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Kenney, DM [+details]

Abstract

A large storage capacitor is provided for a one-device memory cell by creating through reactive ion etch techniques and epitaxial growth a deep diffused PN junction. A cell utilizing this capacitor requires only a small area at the surface of a semiconductor substrate.