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Staggered Channel EPROM/EAROM Disclosure Number: IPCOM000055775D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

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Troutman, RR [+details]


To maximize current flow and electron heating, a programmable field effect transistor memory cell uses different channel widths between the source and drain, with parallel channel walls near source and drain assuring alignment insensitivity.