Browse Prior Art Database

Staggered Channel EPROM/EAROM

IP.com Disclosure Number: IPCOM000055775D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Troutman, RR [+details]

Abstract

To maximize current flow and electron heating, a programmable field effect transistor memory cell uses different channel widths between the source and drain, with parallel channel walls near source and drain assuring alignment insensitivity.