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High Schottky Barriers using Optimum Al(2)O(3) Barrier Films Disclosure Number: IPCOM000055781D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

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Gartner, HM Sarkary, HG Schnitzel, RH [+details]


An optimum procedure to provide Al(2)O(3) films during in situ Al or A1 alloy thin film deposition is described. Al(2)O(3) films are used as a diffusion barrier for various purposes, such as to maintain Schottky barrier diode integrity.