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Determination of Interstitial Oxygen in Silicon using Internal Calibration

IP.com Disclosure Number: IPCOM000055782D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Agopian, GK Kulkarni, MV [+details]

Abstract

Oxygen control in silicon wafers used for integrated circuit devices is required for various reasons, such as wafer warpage control, dislocation movement control, and impurity gettering via precipitate dislocation-complexes. The oxygen in silicon wafers has been measured either by double-beam infrared (IR) spectrometry or by FTIR (Fourier Transform Infrared) spectrometry. Both these methods require multiple reflection corrections. To make such corrections accurately, the sample surfaces must be polished and parallel.