Determination of Interstitial Oxygen in Silicon using Internal Calibration
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13
Oxygen control in silicon wafers used for integrated circuit devices is required for various reasons, such as wafer warpage control, dislocation movement control, and impurity gettering via precipitate dislocation-complexes. The oxygen in silicon wafers has been measured either by double-beam infrared (IR) spectrometry or by FTIR (Fourier Transform Infrared) spectrometry. Both these methods require multiple reflection corrections. To make such corrections accurately, the sample surfaces must be polished and parallel.