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Integrated Schottky Barrier Transistor Design

IP.com Disclosure Number: IPCOM000055786D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Tuman, D [+details]

Abstract

Integrated Schottky barrier transistor clamps may be fabricated from various metals to form the anode of the Schottky barrier diode (SBD) depending on the particular barrier potential desired. PtSi, Al, Cr, Ta, TiW are examples of typical SBD anode metallurgies.