Browse Prior Art Database

Integrated Schottky Barrier Transistor Design Disclosure Number: IPCOM000055786D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue


Related People

Tuman, D [+details]


Integrated Schottky barrier transistor clamps may be fabricated from various metals to form the anode of the Schottky barrier diode (SBD) depending on the particular barrier potential desired. PtSi, Al, Cr, Ta, TiW are examples of typical SBD anode metallurgies.