Electron Flooding for Ion Implanting FET Devices
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13
In high current ion-implant machine development for high density products, it has been found necessary to include an electron flooding dosimetry cone. The electron flooding cone is designed to reduce the positive charge build up on the wafer surface which leads to electrostatic discharges into device contacts. Typically, the cone is designed to control the wafer surface to voltages between 0 V and -100 V. The -100 V limit is set by the bias used to produce complete collection of flooding and secondary electrons. Reasonable (<5 percent) accuracy may be achieved with this voltage reduced as low as -50 V.