Browse Prior Art Database

Device Isolation by using a Narrow SiO(2) Trench

IP.com Disclosure Number: IPCOM000055793D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Horng, CT Konian, RR [+details]

Abstract

The tolerance of the device dimension achievable from the conventional process is controlled by lithographic methods. High resolution E-beam lithography is the most promising method for delineating a sub-micrometer size dimension. However, even with its high resolution capability, the tolerance that can be achieved by E-beam lithography is still larger than a few tenths of a micrometer.