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Characterization Method of Silicon Wafers Based on Oxygen Precipitation Characteristics

IP.com Disclosure Number: IPCOM000055819D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Cazcarra, V [+details]

Abstract

This article describes a characterization method able to determine if a given wafer should be preferably processed either in a FET line or in a bipolar line. FET substrates need a great number of clusters to facilitate fast oxygen atom precipitation during thermal processing of the wafer while, on the other hand, bipolar products need a limited number of clusters to assure a low oxygen precipitation.