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Ion Beam Scanning in a Circular Pattern Disclosure Number: IPCOM000055827D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

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Baier, H Bayer, T Hinkel, H Kraus, G Seybold, D [+details]


This scanning system improves the efficiency during the ion beam implantation of a circular area, for example, a wafer, which was previously effected in square scan patterns by superposed scan voltages of triangular waveforms. Improvements are obtained in particular in the implantation speed and the uniform surface density of the implanted ions, while the technical means required are reduced.