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Method of Producing Transistors with Optimum Base Contact Disclosure Number: IPCOM000055832D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

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Berger, HH Thiel, KP [+details]


This method, which permits the direct contacting of the active intrinsic base area, is described by means of a transistor produced in accordance with the collector diffused isolation principle.