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Method for Determining Diffusion Depth in FET

IP.com Disclosure Number: IPCOM000055843D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Tsang, YL [+details]

Abstract

The depth of the drain and source diffusion pockets 2, 3 of a field effect transistor (FET) 4 (Fig. 1) can be calculated from two measurements that are commonly available: (1) the polysilicon sheet resistivity and (2) delta L, the change in channel length which is obtained conventionally from a plot of linear transconductance as a function of the art work channel length (Fig. 2). These calculated values of diffusion depth compare closely with values obtained by destructive testing.