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DMOS/SOS Field Effect Transistor Device and Process Disclosure Number: IPCOM000055853D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

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Soderman, DA [+details]


A process sequence is disclosed for forming a diffused MOS (metal oxide semiconductor) field-effect transistor (MOSFET) device in a silicon on sapphire (SOS) structure. The use of the SOS structure enables the simultaneous formation of very short channel LEFF diffused MOS (DMOS) complementary devices which offer improved performance in cascaded (serial) circuits without the usual short channel or parasitic device problems.