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This article describes a method wherein the physical phenomenon of oxidation-enhanced diffusion of boron can be reduced and sharper boron profiles obtained even when the post-processing includes oxidation.
English (United States)
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Technique for Reducing Oxidation Enhanced Diffusion
This article describes a method wherein the physical phenomenon of
oxidation-enhanced diffusion of boron can be reduced and sharper boron profiles
obtained even when the post-processing includes oxidation.
An ion-implanted acceptor gaussian concentration profile is typically used for
threshold and substrate sensitivity (V(T) vs V(sx)) control in N-channel IGFETs.
The implanted profile redistributes with further thermal processing. The degree
of redistribution is increased in the presence of an oxidizing ambient. This is
shown schematically in the drawing which illustrates the concentration profile for
the oxidizing ambient compared with non-oxidation.
The increased distribution degrades the slope of the substrate sensitivity, and
results in more variation in device threshold as a function of source-to-substrate
bias. It also increases short channel effect. In general, localization of the
acceptor (boron) profile is beneficial from a device viewpoint.
An improvement is obtained by the implantation of an inert element, such as
argon, at a sufficient dose and energy (typically those required for damage
gettering applications) in an inactive region of the device, which reduces the
enhanced redistribution of boron during an oxidizing process step.
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