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This article relates to a method of defining a niobium (Nb) film pattern by the use of carbon tetrachloride (CCl(4)) plus argon (Ar) plasma etch (or reactive ion etch).
English (United States)
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CCl(4) Reactive Ion Etching of Niobium Films
This article relates to a method of defining a niobium (Nb) film pattern by the
use of carbon tetrachloride (CCl(4)) plus argon (Ar) plasma etch (or reactive ion
The system used to carry out the present method is a diode sputter system
with a laser end point detector. Gases used are CCl(4) plus Ar. The total gas
pressures and their ratio can be varied widely. Normally, the system operates in
a pressure ratio range of 1:2 to 1:5, and at a total pressure of 10 mu to 30 mu.
To keep the substrate temperature low, the power density is kept low, a few
tenths of a watt per cm/2/. A layer of niobium approximately 3000 angstroms
thick is deposited by E-beam evaporation on silicon or on thermal oxide on
silicon. The desired pattern is formed using Shipley AZ 1350J photoresist
applied about 1 micron thick and exposed and developed in the standard