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CCl(4) Reactive Ion Etching of Niobium Films

IP.com Disclosure Number: IPCOM000055925D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Kaiser, HD Metzger, WC Ting, CY [+details]

Abstract

This article relates to a method of defining a niobium (Nb) film pattern by the use of carbon tetrachloride (CCl(4)) plus argon (Ar) plasma etch (or reactive ion etch).