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This method provides an improved negative-acting photoresist suitable for lift-off deposition of interconnection metallurgy in integrated circuit processing.
English (United States)
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Negative Acting Positive Photoresist
This method provides an improved negative-acting photoresist suitable for
lift-off deposition of interconnection metallurgy in integrated circuit processing.
A negative image is formed in modified phenol-formaldehyde-type resins with
diazo-naphthoquinone-type sensitizers. For example, AZ1350J (Shipley
Company, Inc.) photoresist is exposed to actinic radiation through a mask and
then baked at about 95 degrees C for about 10 minutes followed by a blanket
exposure in actinic radiation sufficient to fully cross-link the photoactive
component in the previously unexposed areas. This material is then removed
with an alkaline developer, leaving the previously exposed areas.
The photoresist can be modified by the addition of any basic
compound, strong or weak, such as potassium hydroxide (KOH), sodium
hydroxide, tetramethylammonium hydroxide (TMAH), etc. Typical mix
0.5 gm. KOH per 100 gm. AZ1350J;