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Elimination of Chlorine in LPCVD SiO(2)

IP.com Disclosure Number: IPCOM000056000D
Original Publication Date: 1980-Oct-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Kemlage, BM [+details]

Abstract

High-temperature low-pressure chemical vapor deposition silicon dioxide (LPCVD - SiO(2)) is deposited using a reactant mixture of SiH(2)Cl(2) and N(2)O. These deposited layers appear to have all the characteristics of good quality SiO(2). However, during subsequent high-temperature oxidations or HCl etching, the silicon at the SiO(2) to silicon interface is attached, and the resultant undercutting of the SiO(2) layer causes a delamination of the film from the substrate. This problem is caused by a bonded chlorine from the reactants in the As-deposited SiO(2) layer. The concentration of this chlorine is about 1x10/21/ AT/CC.