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Polysilicon Vertical Resistors

IP.com Disclosure Number: IPCOM000056009D
Original Publication Date: 1980-Oct-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Abbas, SA [+details]

Abstract

Deep dielectric isolation (DDI) requires the etching of silicon by reactive ion etching (RIE) and the filling of the trench by chemical vapor deposited (CVD) oxide. The CVD oxide, in turn, is etched back by RIE to give a reasonably planar surface.