Browse Prior Art Database

Polysilicon Vertical Resistors Disclosure Number: IPCOM000056009D
Original Publication Date: 1980-Oct-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue


Related People

Abbas, SA [+details]


Deep dielectric isolation (DDI) requires the etching of silicon by reactive ion etching (RIE) and the filling of the trench by chemical vapor deposited (CVD) oxide. The CVD oxide, in turn, is etched back by RIE to give a reasonably planar surface.