Walled Emitter Fabrication Process
Original Publication Date: 1980-Oct-01
Included in the Prior Art Database: 2005-Feb-13
High bipolar device current gain, high breakdown voltage and low reverse leakage current are achieved by the elimination of the sidewall portions of the emitter-base junction in shallow junction bipolar transistors. The emitter-base junction is butted against recessed oxide while the extrinsic base region underneath the recessed oxide is heavily doped to reduce base resistance.