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Continuous associative operation takes place in the small associative memory cell shown in Fig. 1 which can be combined with random logic on the same semiconductor chip.
English (United States)
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Associated Memory Cell Circuit
Continuous associative operation takes place in the small associative
memory cell shown in Fig. 1 which can be combined with random logic on the
same semiconductor chip.
The signal levels are:
W write select : levels +/- 0.25V D1,D2 data input : levels - O.1V, -0.6V
X1,X2 associative data : levels +/- 0.25V
M associative match : levels + 1.25V, + .65V
The write operation is as follows: Line W is perpendicular to the direction of
lines D1 and D2. A cell is selected for write by the coincidence of the high level
(+0.25V) on W and a low level (-0.6V) on either D1 or D2. Assume initially that
T3 is "on" and T4 is "off". S1 is at +1.25V, and S2 is at +0.85V. D1 is permitted
to fall to about - 0.6V. This may be accomplished by the peripheral circuit shown
in Fig. 2.
T1 is turned on causing cell node S1 to fall to +0.65V. This level is clamped
by the Schottky barrier diode SBD2. T3 turns off, allowing S2 to rise to +1.25V.
T4 is turned on. D1 is returned to the high level -0.1V ending the write cycle.
The associative read operation takes place continuously. The
levels of X1 and X2 are compared to the levels at the cell nodes S1
and S2 in an exclusive-OR operation which determines the presence or
absence of current (Im) from the match line (M) as shown in the
X1 X2 S1 S2 "ON" Im
-0.25V +0.25V +.85V +1.25V T10,T7 0
-0.25V +0.25V +1.25V +0.85V T10,T8 +0.3mA
0.25V -0.25V +.85V +1.25V T9, T6 +0.3mA
0.25V -0.25V +1.25V +0.85V T9...