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This three-state driver uses a non-isolated vertical PNP transistor as a pull-down device to provide high speed push-pull drive capability together with very low power dissipation.
English (United States)
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Three State Push Pull Driver
This three-state driver uses a non-isolated vertical PNP transistor as a pull-
down device to provide high speed push-pull drive capability together with very
low power dissipation.
Resistors R1 and R2 serve as the collector load resistance for the driving
logic circuit. Schottky diode D1 is for level shifting. Resistor R5 protects against
damage due to an accidental output node short circuit to ground. The high
impedance three-state input accepts logic levels and turns both T4 and T6 off by
pulling current through R1, R2, T5 and R4, while clamp transistor T2 limits the
down level and prevents saturation of T5. The circuit should be designed for IR4
> IR2 to insure the turn off of T3, T4 during a three-state condition. The
complementary, total emitter follower configuration of the logic path produces
negligible delay and provides performance superior to that of inverting NPN
The features of this three-state push-pull driver are:
- High speed - all emitter follower logic path has negligible
- Low power dissipation - driver transistors consume no power in
- Complementary design does not require inverting or phase
- Three-state feature requires minimal additional components.
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