The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
A high density, low resistance junction field-effect transistor (JFET) may be fabricated by the following illustrated process.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
80% of the total text.
Page 1 of 2
High Density, Low Resistance Silicon JFET
A high density, low resistance junction field-effect transistor (JFET) may be
fabricated by the following illustrated process.
The device is made starting with a p-substrate on which an n-type layer is
epitaxially grown approximately 3000-4000 angstroms thick with an impurity
density of approximately 10/17/ cm/-3/. A layer of 1000-2000 angstroms of
SiO(2) :B(2)O(3) glass is deposited from the reaction of SiH(4) and B(2)H(6) with
O(2) at 750-8500 degrees C, producing the structure of Fig. 1.
The glass layer provides an excellent source for a very high concentration, in
the vicinity of 3x10/20/ cm/-3/, diffusion of B without causing a high concentration
of defects. A layer of MgO approximately 3000 angstroms thick is then deposited
over the glass. The gate region is defined, and the unwanted area of MgO and
glass is etched away. A short drive-in diffusion accompanied by a growth of
thermal SiO(2) approximately 200 angstroms thick provides a shallow junction,
and its passivation thereby produces the structure of Fig. 2. The p+ region of
Fig. 2 will have a sheet resistance, for a depth of 2000 angstroms, of
approximately 100 omega/sq.
A layer of poly sulfone ~/~ 3000 angstroms thick is then deposited over the
entire surface. The vertical thickness of this layer and any exposed SiO(2) layer
are then removed by reactive ion etching (RIE), yielding the structure of Fig. 3.
The device of Fig. 3 can now have a shallow As ion impla...