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High Density, Low Resistance Silicon JFET

IP.com Disclosure Number: IPCOM000056123D
Original Publication Date: 1980-Oct-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Dumke, WP Das, G [+details]

Abstract

A high density, low resistance junction field-effect transistor (JFET) may be fabricated by the following illustrated process.