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Recessed Oxide Isolation with Self Aligned Field Implant

IP.com Disclosure Number: IPCOM000056161D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Adler, E [+details]

Abstract

This recessed oxide isolation process provides improved diffusion break-down voltage and capacitance characteristics for integrated circuit devices using field oxide threshold tailoring diffusions or ion-implanted regions under a thick field oxide.