Determination of Electrical Area of MOS Structures
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14
In the manufacture of semiconductor devices, various processing dependent parameters are normally determined in response to capacitance-voltage (C-V) measurements on metal-oxide-semiconductor (MOS) structures. For example, expressions for determining oxide thickness, dopant concentration, average substrate doping level, concentration profile, etc., depend on the accuracy of MOS C-V measurements.