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Determination of Electrical Area of MOS Structures Disclosure Number: IPCOM000056163D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

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Corcoran, RA Kaloustian, A Keenan, WA Morton, WO [+details]


In the manufacture of semiconductor devices, various processing dependent parameters are normally determined in response to capacitance-voltage (C-V) measurements on metal-oxide-semiconductor (MOS) structures. For example, expressions for determining oxide thickness, dopant concentration, average substrate doping level, concentration profile, etc., depend on the accuracy of MOS C-V measurements.