E-Beam Writing at High Exposure Doses
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14
Resist materials currently used by electron-beam exposure tools in the manufacture of masks and reticles for photolithography require high exposure doses (20 mC/cm/2/) to produce developed positive relief images of high fidelity. At these doses, however, the images of adjacent pattern elements (rectangles), which are successively exposed, show a gross deterioration in comparison to others. Shape control is lost due to "blooming" of the images in a way that depends on the history of the exposure.