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E-Beam Writing at High Exposure Doses

IP.com Disclosure Number: IPCOM000056178D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Giuffre, GJ Michail, MS Simpson, RA Stickel, W [+details]

Abstract

Resist materials currently used by electron-beam exposure tools in the manufacture of masks and reticles for photolithography require high exposure doses (20 mC/cm/2/) to produce developed positive relief images of high fidelity. At these doses, however, the images of adjacent pattern elements (rectangles), which are successively exposed, show a gross deterioration in comparison to others. Shape control is lost due to "blooming" of the images in a way that depends on the history of the exposure.