Browse Prior Art Database

High Temperature Lift Off Process for Polyimide Structures Disclosure Number: IPCOM000056184D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue


Related People

Rothman, LB [+details]


In order to obtain low contact resistance between two levels of metal, it is necessary to sputter clean in situ prior to metal deposition. However, this is a high temperature process (200 degrees C), and therefore cannot be done using a simple resist lift-off mask. This is necessary to use a high temperature lift-off process at elevated temperatures. All of the high temperature lift-off processes involve etching in oxygen plasma, and therefore cannot be done on a polyimide surface since the polyimide would be etched also.