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High Temperature Lift Off Process for Polyimide Structures

IP.com Disclosure Number: IPCOM000056184D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Rothman, LB [+details]

Abstract

In order to obtain low contact resistance between two levels of metal, it is necessary to sputter clean in situ prior to metal deposition. However, this is a high temperature process (200 degrees C), and therefore cannot be done using a simple resist lift-off mask. This is necessary to use a high temperature lift-off process at elevated temperatures. All of the high temperature lift-off processes involve etching in oxygen plasma, and therefore cannot be done on a polyimide surface since the polyimide would be etched also.