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Deposition of First Layer of SiO(2) without Damage to unused Contacts and Fiducials Disclosure Number: IPCOM000056186D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

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Related People

DiAngelo, DW Longo, R Schnitzel, RH [+details]


Wafers that have leakage and/or shorting in the first layer of silicon dioxide due to the removal of the passivation layer on unused contacts are normally rejected because of contact erosion. This problem can be resolved with the following process which utilizes a low resputter rate during initial deposition of quartz. Standard operating procedures are used on the wafers up to the point where the first layer of quartz is deposited. The wafers are loaded in the quartz (SiO(2)) sputtering system. The system is evacuated and back filled in accordance with standard procedures. The first 300-500 angstroms of SiO(2) deposition is made using a standard quartz process with a resputter rate of 0.2.