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Method to Improve Resist Pattern Definition

IP.com Disclosure Number: IPCOM000056299D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Daetwyler, K Forster, T [+details]

Abstract

In manufacturing semiconductor devices and in similar technologies, lift-off processes are employed to obtain the desired structures. The well defined resist pattern and steep resist edges required when applying such processes are obtained by subjecting the developed resist pattern to a plasma etching step in which part of the resist is removed isotropically, thus improving the pattern definition beyond the resolution limit of the exposure and development processes.