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Proximity Correction in Electron Beam Lithography

IP.com Disclosure Number: IPCOM000056300D
Original Publication Date: 1980-Nov-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Bretscher, E [+details]

Abstract

Proximity effect in electron lithography is an effect due to electron scattering that leads to undesired exposure of the resist in regions adjacent to those addressed by the electron beam. Adjustments can be made by varying the electron beam intensity or dwell time. The areas in which such corrective measures are required can be determined by the method herein described.