Browse Prior Art Database

Bipolar Memory Cell with Polysilicon Metal Cross Coupling

IP.com Disclosure Number: IPCOM000056384D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Howard, DD Wiedmann, SK [+details]

Abstract

A merged transistor logic (MTL) or integrated injection logic (I/2/L) memory cell is made with polysilicon-metal coupling to provide reduced cell size and improved cell switching time.