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Gas Display Panel Process for Transparent Conducting Film Disclosure Number: IPCOM000056398D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

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Leung, GB Li, P [+details]


In this process a blanket layer of indium-tin-oxide material is deposited on a glass plate, which will become part of the gas display panel, by reactive sputter techniques. A suitable photoresist is then deposited on the glass plate, exposed to the desired pattern, and developed to define the desired lines on the plate. The exposed portions of the indium-tin-oxide layer, not covered by the resist, are then removed by etching with a suitable etchant, and the resist subsequently removed. The glass plate is then annealed in dry air for one hour at a temperature of 400 - 450 degrees C and subsequently in forming gas (10% H(2) - 90% N(2)) for one-half hour at a temperature in the range of 400 - 450 degrees C.