Browse Prior Art Database

Controlling the Oxygen Concentration of Silicon Crystals by Magnetically Induced Melt Rotation

IP.com Disclosure Number: IPCOM000056399D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Hull, EM [+details]

Abstract

The oxygen concentration of silicon crystals pulled from a melt is controlled using melt rotation induced by the magnetic field of the three-phase resistance heaters used to heat the melt.