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Controlling the Oxygen Concentration of Silicon Crystals by Magnetically Induced Melt Rotation Disclosure Number: IPCOM000056399D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

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Hull, EM [+details]


The oxygen concentration of silicon crystals pulled from a melt is controlled using melt rotation induced by the magnetic field of the three-phase resistance heaters used to heat the melt.