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Contamination Monitor for Reactive Ion Etch Process

IP.com Disclosure Number: IPCOM000056404D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Desilets, KR Montillo, F [+details]

Abstract

The presence of contamination caused by reactive ion etching of trenches in silicon, which results in bipolar product yield loss, is determined by charge-retention measurements on a series of MOS capacitors. The silicon surface of these wafers is previously exposed to the RIE ambient. The contaminated silicon layer is removed by silicon etching. The charge-retention technique can be used to determine the silicon removal needed to eliminate the contamination.