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Reduction of Charge in Silicon Dioxide Layers by Use of Chlorine Ion Implantation

IP.com Disclosure Number: IPCOM000056407D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Briska, M Seaboldt, JJ Thiel, KP [+details]

Abstract

As described herein, silicon dioxide layers applied to semiconductor substrates by any of the usual means, such as by sputtering, anodic oxidation, thermal oxidation or deposition of pyrolytic silicon dioxide, can be produced having a low charge level. The charge level for silicon dioxide layers is usually at least about 10/12/ ions/cm/2/. This level of charge is too high for most applications. In accordance with the method of the present article, the charge level is reduced to about 10/11/ ions/cm/2/ by chlorine ion implantation.