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Metallurgy System for Stable Low Barrier Schottky Barrier Diodes and Improved Electromigration Resistance

IP.com Disclosure Number: IPCOM000056415D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Zalar, SM Berenbaum, L Howard, JK Lloyd, JR Prokop, GS Sullivan, MJ [+details]

Abstract

It is considered that TiW metallurgy is superior to TaCr in the production of reproducible (stable) low barrier Schottky diodes. In known processes, sputtered TiW provides the SBD (Schottky barrier diode) contact as well as the diffusion barrier for Al/Al-Cu. Experience has shown that 100-1500 Angstrom of TiW is required for a diffusion barrier. The 1500 Angstrom thick TiW layer covers areas of the wafer in which it is not desired and RIE (reactive ion etching) is required for its removal.