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Improved photoresist resolution is provided by exposing positive resists in the short UV (ultraviolet) spectral region around 3100 Angstroms.
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Improved Resist Resolution Using Short UV Exposure
Improved photoresist resolution is provided by exposing positive resists in
the short UV (ultraviolet) spectral region around 3100 Angstroms.
A positive-acting resist which is a mixture of a phenol-formalde-hyde novolak
resin and 2-diazo-1-oxo-naphthalene-5-sulfuric acid diester of 2,4-
dihydroxybenzophenone is coated onto a substrate, such as a silicon
semiconductor wafer, and exposed patternwise in a reflective projection printing
system to short wavelength UV light of around 3100 Angstroms. The exposed
resist can be force-developed without undue loss of unexposed resist to provide
a developed pattern having improved resolution.