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Use of Transparent Capacitive Contact in Scanned Surface Photovoltage Studies Disclosure Number: IPCOM000056422D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

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Chye, PW Norris, WT Tavel, MA [+details]


The use of a self-contained, wide area, transparent, capacitive contact eliminates the need for oxide growth and thin (150 Angstroms) metal (gold or aluminum) electrode deposition on semiconductor wafers to be examined for defects by the Scanned Surface Photovoltage (SSP) technique.