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Use of Transparent Capacitive Contact in Scanned Surface Photovoltage Studies

IP.com Disclosure Number: IPCOM000056422D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Chye, PW Norris, WT Tavel, MA [+details]

Abstract

The use of a self-contained, wide area, transparent, capacitive contact eliminates the need for oxide growth and thin (150 Angstroms) metal (gold or aluminum) electrode deposition on semiconductor wafers to be examined for defects by the Scanned Surface Photovoltage (SSP) technique.