Browse Prior Art Database

Polysilicon Resistor Fabrication

IP.com Disclosure Number: IPCOM000056425D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Lloyd, JR Polcari, MR Sullivan, MJ [+details]

Abstract

The device density on single crystal silicon can be increased by fabricating polysilicon resistors on the surface of the first or second level of quartz without adversely affecting the structures which are formed previously in the semiconductor manufacturing process.