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Polysilicon Resistor Fabrication Disclosure Number: IPCOM000056425D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

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Lloyd, JR Polcari, MR Sullivan, MJ [+details]


The device density on single crystal silicon can be increased by fabricating polysilicon resistors on the surface of the first or second level of quartz without adversely affecting the structures which are formed previously in the semiconductor manufacturing process.