Browse Prior Art Database

Associative Memory Cell

IP.com Disclosure Number: IPCOM000056431D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Denis, BA [+details]

Abstract

This memory cell has low standby currents, good noise immunity because the cell node potential difference is determined by a Schottky diode forward voltage, and is able to supply a relatively large bit line current which results in short access time. The cell layout can take advantage of merged structures, which results in the smaller cell area.