Associative Memory Cell
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14
This memory cell has low standby currents, good noise immunity because the cell node potential difference is determined by a Schottky diode forward voltage, and is able to supply a relatively large bit line current which results in short access time. The cell layout can take advantage of merged structures, which results in the smaller cell area.