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Associative Memory Cell Disclosure Number: IPCOM000056431D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

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Denis, BA [+details]


This memory cell has low standby currents, good noise immunity because the cell node potential difference is determined by a Schottky diode forward voltage, and is able to supply a relatively large bit line current which results in short access time. The cell layout can take advantage of merged structures, which results in the smaller cell area.