Browse Prior Art Database

Power FET and Manufacturing Method

IP.com Disclosure Number: IPCOM000056448D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG Wang, PP [+details]

Abstract

An FET (field-effect transistor) conducts in a number of parallel vertical channels that are formed between gate electrodes arranged in parallel fingers for high current capacity.