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Method for Forming Uniformly Distributed Precipitates in Thin Films

IP.com Disclosure Number: IPCOM000056511D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Brosious, PR Greiner, JH [+details]

Abstract

A method for forming uniformly distributed precipitates in thin films is described. Metals with different lattice parameters are sequentially deposited. The difference in lattice parameters creates a dislocation network. Upon heat treatment of the resulting films, precipitates nucleate on the dislocation network.