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Desorption Apparatus for Vacuum Equipment

IP.com Disclosure Number: IPCOM000056626D
Original Publication Date: 1988-Jan-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Ekblom, CJ Gajda, J Schnitzel, R Wajda, W [+details]

Abstract

Oxide interfaces formed during batch wafer evaporation processing act to increase via (multi-level interconnection) resistance and to reduce via contact reliability. Such formations have been determined to be due to water vapor and oxygen gases resident in the evaporation tooling. This article describes a process/machine change which (Image Omitted) precleans the responsible vacuum system surfaces by ion bombardment, thereby reducing the probability that oxide films will form at the via interfaces. Low resistance vias are presently obtained through use of a sputter clean cycle applied to the lower metal wafer surfaces by RF (radio frequency) ion bombardment, together with a modified heat cycle, prior to deposition of next level metal.