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Two-Level Metal Enhanced Groundrules for Back End of the Line Cost Savings

IP.com Disclosure Number: IPCOM000057087D
Original Publication Date: 1988-Mar-01
Included in the Prior Art Database: 2005-Feb-14

Publishing Venue

IBM

Related People

Authors:
Cronin, JE Meulemans, DR [+details]

Abstract

Through the utilization of tapered vias and different conductor materials for wiring metal levels one (M1) and two (M2) in the fabrication of semicondutors, many products can achieve cost benefits from a mix of advanced and current back end of the line (BEOL) process technologies. Two basic criteria drive the BEOL process, namely, the need for maintaining a planar surface at each wiring level, allowing multilevel wiring, and the utilization of reactive ion etching (RIE), instead of lift off, for the line definition required to achieve photolimited groundrules. Through a simplification of the BEOL processes, a cheaper and less aggressive product set can be fabricated at at cost saving.