Browse Prior Art Database

Direct Metallization Processes

IP.com Disclosure Number: IPCOM000057318D
Original Publication Date: 1988-Apr-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Gimzewski, JK Reihl, B Schlittler, RR [+details]

Abstract

The fabrication of ultra-small interconnection lines of metallic films on semiconductor surfaces is a key element in the construction of micro- and nano-electronic devices. Very large-scale integrated (VLSI) circuits with enhanced storage capability are among the devices requiring ultra-small metallic conductors. Another example are superconducting quantum interference devices (SQUIDs) for monitoring very weak magnetic fields. For these devices, linewidths as small as 80 nm have been produced by lithography. However, lithographic techniques require a plurality of process steps and involve the risk of low yield. Some semiconductors, as a function of pressure, exhibit a discontinuity in their electrical resistance and volume, with no structural changes.