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Improved Photoconductor Barrier Layer

IP.com Disclosure Number: IPCOM000057341D
Original Publication Date: 1988-Apr-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Champ, RB Stremel, DA [+details]

Abstract

In the xerographic process wherein photoconductors are used in the discharged area development (DAD) mode, photoconductor defects are of great importance. A barrier layer is described which significantly improves discharged area defects in layered photoconductors, without affecting the photoconductor's electrical parameters. The photoconductor's sensitivity and low humidity dark decay may also be improved. In a layered photoconductor, the barrier layer consists of an inorganic pigment, specifically TiO2 or SiO2, dispersed in a polyamide binder, such as Elvamide 8061*. Barrier layer thicknesses as high as 5 microns can be utilized. Charge generation layers utilizing CDB or hydroxysquarylium, and charge transport layers, such as hydrazones in polycarbonate binders, can be used with the barrier layer. * Trademark of E. I.