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Method for Making a Single Sidewall Structure

IP.com Disclosure Number: IPCOM000057455D
Original Publication Date: 1988-May-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Cronin, JE [+details]

Abstract

By sloping one of the sidewalls of a mandrel used to define sidewall structures, a detached sidewall structure is formed. Referring to Fig. 1, substrate 2 is coated with film 4 (i.e., a material to be patterned). A mandrel material 6 is deposited on film 4. Then, a photoresist is exposed through mask 10 and developed to form a cross-section 8. Note that the left side of mask 10 is comprised of a dot pattern. The slope of the left edge of photoresist cross-section 8 is controlled by the width of the dotted edge and density of dots in the corresponding region of the mask 10. Fig. 2 shows the cross-section of photoresist 8 of Fig. 1 transfer etched into mandrel material 6. The mandrel is then covered by a conformal material 12. To obtain the cross-section of Fig.