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Thin Film Electron Energy Analyzer

IP.com Disclosure Number: IPCOM000057669D
Original Publication Date: 1988-Jun-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Clauberg, R Rothauser, E Seitz, HK [+details]

Abstract

This article describes an improvement for an electron energy analyzer arrangement which is used for laser testing of integrated circuits. Recently, testing schemes for VLSI chips have been proposed which allow voltage measurements on internal nodes of integrated circuits with sub-micron spatial resolution. A laser scanning unit produces a laser spot which is directed to the node to be measured. The voltage of the node determines the energy of the electrons which are emitted due to the laser radiation, and thus the voltage can be measured by an electron energy analyzer. The ideal analyzer for voltage detection from emitted electrons is a retarding field analyzer, i.e.