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Using Transition Metal Conducting Oxides to Prevent Conductivity Degradation of Submicron Wiring at High Temperatures

IP.com Disclosure Number: IPCOM000057752D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Brodsky, S Elbaum, LK Joshi, RV Wittmer, M Yee, D [+details]

Abstract

A technique is described whereby conductivity degradation at high temperatures in submicron wiring is prevented with the use of transition metal conducting oxides. The concept makes possible the filling of deep trenches in the insulator with aluminum, without having the silicon, from the substrate or from PtSi, dissolve in Al-Cu. As a result, transition conducting metal oxides provide effective barriers, particularly for high temperature protection, during the fabrication of semiconductor devices. In the fabrication of semiconductor devices, extension of device dimensions into the submicron range is necessary so as to increase the speed of the devices and to reduce power density.