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Selective Area Deposition Method by Ion Beam Sputtering

IP.com Disclosure Number: IPCOM000057896D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Souk, JH [+details]

Abstract

Thin film deposition or etching by ion beam is a well-known technology. Basically, the applications include an ion source for ion beam generation and target material for the deposition of materials onto two-dimensional surface by ion beam bombardments. Ion beam etching or deposition differs from conventional sputtering in that the beam of ions is monoenergetic, and is independently controllable with respect to ion energy and current density. The ions have a long mean free path and the beam is nearly linear [*]. In a conventional method of ion beam deposition, the target is tilted near 45o with respect to the incident beam, and the substrate is located away from the target to receive the sputtered material coming from the target (Fig. 1).